小米手机与华为手机晶振TG-5006CJ爱普生2016晶振X1G004131000400TCXO
众所周知所有的实时系统都需要在每一个时钟周期去执行程序代码,而这个时钟周期就由晶振产生.在手机中一般至少有2个爱普生晶振,一个是32.768K的RTC晶振crystal,一个是26M基准时钟晶振oscillator.当然这两种晶振的原理也各不相同.
INV为反相器,RF为内部反馈电阻,它使反相器工作在线性区,获得增益RF和INV等同于一个高增益放大器.Rext为外部限流电阻,Cl1和Cl2为外部负载电容.一般的晶振的负载电容为15p或12.5p,如果再考虑元件引脚的等效输入电容,则两个22p的电容构成晶振的振荡电路就是比较好的选择.
TG-5006CJ爱普生2016晶振X1G004131000400TCXO,小米手机与华为手机晶振
削峰正弦波
爱普生有源晶振编码
型号
频率
长X宽X高
输出波
电源电压
削顶正弦波
X1G004131000400
TG-5006CJ
26.000000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
1.700to1.900V
Clippedsinewave
X1G004131000600
TG-5006CJ
16.367667MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131000700
TG-5006CJ
16.368000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131000800
TG-5006CJ
16.369000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131000900
TG-5006CJ
19.200000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131001000
TG-5006CJ
26.000000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131001100
TG-5006CJ
38.400000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131001300
TG-5006CJ
16.367667MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131001400
TG-5006CJ
16.368000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131001500
TG-5006CJ
16.369000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131001600
TG-5006CJ
19.200000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131001700
TG-5006CJ
26.000000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131001800
TG-5006CJ
38.400000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
1.700to3.300V
Clippedsinewave
X1G004131002600
TG-5006CJ
40.000000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131002900
TG-5006CJ
19.200000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.600to3.000V
Clippedsinewave
X1G004131003100
TG-5006CJ
40.000000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131003200
TG-5006CJ
26.635300MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.700to3.465V
Clippedsinewave
X1G004131003300
TG-5006CJ
28.974000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.700to3.465V
Clippedsinewave
X1G004131003400
TG-5006CJ
26.000000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
1.700to1.900V
Clippedsinewave
X1G004131003600
TG-5006CJ
26.000000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.660to2.940V
Clippedsinewave
X1G004131003700
TG-5006CJ
19.200000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.660to2.940V
Clippedsinewave
X1G004131003800
TG-5006CJ
26.000000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
1.700to1.900V
Clippedsinewave
X1G004131004100
TG-5006CJ
40.000000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
X1G004131004200
TG-5006CJ
32.000000MHz
2.00x1.60x0.73mm
VC-TCXO~TCXO
2.850to3.150V
Clippedsinewave
晶体振荡器分为无源晶振和有源晶振两种类型.无源晶振与有源晶振的英文名称不同,无源晶振为crystal晶体,日产晶振而有源晶振则叫做oscillator振荡器.无源晶振是有2个引脚的无极性元件,需要借助于时钟电路才能产生振荡信号,自身无法振荡起来,所以无源晶振这个说法并不准确；有源晶振有4只引脚,是一个完整的振荡器,其中除了石英晶体外,还有晶体管和阻容元件,因此体积较大.
TG-5006CJ爱普生2016晶振X1G004131000400TCXO,小米手机与华为手机晶振
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